公开(公告)号：US11967492B2

公开(公告)日：2024-04-23

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32899 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32568

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.

公开(公告)号：US20220122824A1

公开(公告)日：2022-04-21

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.