公开(公告)号：US11967492B2

公开(公告)日：2024-04-23

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32899 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32568

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.

公开(公告)号：US20220122824A1

公开(公告)日：2022-04-21

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.

公开(公告)号：USD1051081S1

公开(公告)日：2024-11-12

申请号：US29891976

申请日：2023-05-11

Applicant: AP SYSTEMS INC.

Designer： Chang Min Kwon ,  Chang Kyo Kim

公开(公告)号：USD1034493S1

公开(公告)日：2024-07-09

申请号：US29891977

申请日：2023-05-11

Applicant: AP SYSTEMS INC.

Designer： Chang Min Kwon ,  Chang Kyo Kim

Abstract: FIG. 1 is a perspective view of a chamber wall liner for a semiconductor manufacturing apparatus, showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.

公开(公告)号：US11450551B2

公开(公告)日：2022-09-20

申请号：US16989864

申请日：2020-08-10

Applicant: AP SYSTEMS INC.

Inventor： Chang Kyo Kim ,  Chang Min Kwon

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458

Abstract: Provided are an edge ring and a heat treatment apparatus having the same. The edge ring includes a main body having a ring shape. The main body includes a substrate support part configured to support an edge of a bottom surface of a substrate, an outer band provided outside the substrate support part and having a top surface that is higher than a top surface of the substrate support part and is parallel to a top surface of the substrate supported by the substrate support part, an outer sidewall provided outside the outer band, and a groove part provided between the substrate support part and the outer band.