公开(公告)号：US11661651B2

公开(公告)日：2023-05-30

申请号：US17838805

申请日：2022-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Chao Du ,  Xing Chen ,  Keith A. Miller ,  Jothilingam Ramalingam ,  Jianxin Lei

IPC: H01J37/32 ,  C23C14/34 ,  C23C14/58 ,  C23C14/02

CPC classification number: C23C14/3414 ,  C23C14/022 ,  C23C14/5846 ,  C23C14/5873 ,  H01J37/32449 ,  H01J37/32844 ,  H01J37/32981

Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

公开(公告)号：US11542589B2

公开(公告)日：2023-01-03

申请号：US16358465

申请日：2019-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Rongjun Wang ,  Xiaodong Wang ,  Chao Du

IPC: C23C14/14 ,  C23C14/34

Abstract: Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.

公开(公告)号：US11512387B2

公开(公告)日：2022-11-29

申请号：US16846505

申请日：2020-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Chao Du ,  Xing Chen ,  Keith A. Miller ,  Jothilingam Ramalingam ,  Jianxin Lei

IPC: C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.