公开(公告)号：US20140273539A1

公开(公告)日：2014-09-18

申请号：US14206766

申请日：2014-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： HENG PAN ,  MATTHEW SCOTT ROGERS ,  CHRISTOPHER S. OLSEN

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

Abstract translation: 本文提供了处理电介质层的方法的实施例。 在一些实施例中，处理设置在处理室中的衬底上的电介质层的方法包括：（a）将电介质层暴露于在等离子体中形成的活性自由基物质第一段时间; （b）将介电层加热至约900摄氏度至约1200摄氏度的峰值温度; 和（c）将峰值温度保持约1秒至约20秒的第二时间段。

公开(公告)号：US20170316930A1

公开(公告)日：2017-11-02

申请号：US15650469

申请日：2017-07-14

Applicant: APPLIED MATERIALS, INC.

Inventor： HENG PAN ,  MATTHEW SCOTT ROGERS ,  CHRISTOPHER S. OLSEN

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/0234 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.