公开(公告)号：US20140273539A1

公开(公告)日：2014-09-18

申请号：US14206766

申请日：2014-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： HENG PAN ,  MATTHEW SCOTT ROGERS ,  CHRISTOPHER S. OLSEN

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

Abstract translation: 本文提供了处理电介质层的方法的实施例。 在一些实施例中，处理设置在处理室中的衬底上的电介质层的方法包括：（a）将电介质层暴露于在等离子体中形成的活性自由基物质第一段时间; （b）将介电层加热至约900摄氏度至约1200摄氏度的峰值温度; 和（c）将峰值温度保持约1秒至约20秒的第二时间段。

公开(公告)号：US20140349491A1

公开(公告)日：2014-11-27

申请号：US14281020

申请日：2014-05-19

Applicant: APPLIED MATERIALS, INC.

Inventor： AGUS SOFIAN TJANDRA ,  ROGER BENSON TSAI ,  MATTHEW SCOTT ROGERS

IPC: H01L21/02 ,  H01L29/04

CPC classification number: H01L29/04 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/32105 ,  H01L21/67115 ,  H01L29/40114

Abstract: Methods for improving selective oxidation of polysilicon against silicon nitride in a process chamber are provided herein. In some embodiments, a method of selectively oxidizing a substrate disposed within a process chamber includes exposing a substrate having an exposed polysilicon layer and an exposed silicon nitride layer to a hydrogen-containing gas; heating the substrate to a process temperature of at least about 850 degrees Celsius; adding an oxygen containing gas to the process chamber while maintaining the substrate at the process temperature to create a mixture of the hydrogen-containing gas and the oxygen-containing gas; and exposing the substrate to the mixture while at the process temperature to selectively form an oxide layer atop the polysilicon layer substantially without forming an oxide layer atop the silicon nitride layer.

Abstract translation: 本文提供了用于在处理室中改善多晶硅对氮化硅的选择性氧化的方法。 在一些实施例中，选择性地氧化设置在处理室内的衬底的方法包括将具有暴露的多晶硅层和暴露的氮化硅层的衬底暴露于含氢气体; 将衬底加热至至少约850摄氏度的工艺温度; 向处理室中加入含氧气体，同时将衬底保持在工艺温度以产生含氢气体和含氧气体的混合物; 以及在处理温度下将衬底暴露于混合物，以在多晶硅层顶部选择性地形成氧化物层，而不在氮化硅层顶上形成氧化物层。

公开(公告)号：US20170316930A1

公开(公告)日：2017-11-02

申请号：US15650469

申请日：2017-07-14

Applicant: APPLIED MATERIALS, INC.

Inventor： HENG PAN ,  MATTHEW SCOTT ROGERS ,  CHRISTOPHER S. OLSEN

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/0234 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.