公开(公告)号：US20200051794A1

公开(公告)日：2020-02-13

申请号：US16529211

申请日：2019-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHA K. SUBRAMANI ,  PRABURAM RAJA ,  STEVEN V. SANSONI ,  JOHN FORSTER ,  PHILIP KRAUS ,  YANG GUO ,  PRASHANTH KOTHNUR ,  FARZAD HOUSHMAND ,  BENCHERKI MEBARKI ,  JOHN JOSEPH MAZZOCCO ,  THOMAS BREZOCZKY

IPC: H01J37/34 ,  B08B7/00

Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.