公开(公告)号：US20150170952A1

公开(公告)日：2015-06-18

申请号：US14560744

申请日：2014-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHA K. SUBRAMANI ,  Ashish Goel ,  Wei W. Wang ,  Bharath Swaminathan ,  Vijay D. Parkhe ,  Xiaoxiong Yuan

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H02N13/00 ,  H01J37/32091 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68792

Abstract: An electrostatic chuck includes a dielectric disk having a support surface to support a substrate and an opposing second surface, wherein at least one chucking electrode is disposed within the dielectric disk; a radio frequency (RF) bias plate disposed below the dielectric disk; a plurality of lamps disposed below the RF bias plate to heat the dielectric disk; a metallic plate disposed below the lamps to absorb heat generated by the lamps; a shaft coupled to the second surface of the dielectric disk at a first end of the shaft to support the dielectric disk in a spaced apart relation to the RF bias plate and extending away from the dielectric disk and through the RF bias plate and the metallic plate; and a rotation assembly coupled to the shaft to rotate the shaft and the dielectric disk with respect to the RF bias plate, lamps, and metallic plate.

Abstract translation: 静电卡盘包括具有用于支撑基板的支撑表面和相对的第二表面的电介质盘，其中至少一个夹持电极设置在电介质盘内; 设置在介质盘下方的射频（RF）偏置板; 设置在所述RF偏置板下方的多个灯以加热所述电介质盘; 设置在灯下方的金属板，以吸收由灯产生的热量; 在所述轴的第一端处耦合到所述电介质盘的所述第二表面的轴，以将所述电介质盘以与所述RF偏置板隔开的关系支撑并且延伸离开所述电介质盘并且穿过所述RF偏置板和所述金属板 ; 以及联接到所述轴的旋转组件，以相对于所述RF偏置板，灯和金属板旋转所述轴和所述电介质盘。

公开(公告)号：US20170178877A1

公开(公告)日：2017-06-22

申请号：US14975793

申请日：2015-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： RONGJUN WANG ,  ANANTHA K. SUBRAMANI ,  CHI HONG CHING ,  XIANMIN TANG

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/082 ,  C23C14/3407 ,  C23C14/3464 ,  H01J37/32477 ,  H01J37/3429 ,  H01J37/3447 ,  H01L21/02175 ,  H01L21/02266

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

公开(公告)号：US20170211175A1

公开(公告)日：2017-07-27

申请号：US15483520

申请日：2017-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHA K. SUBRAMANI ,  TZA-JING GUNG ,  PRASHANTH KOTHNUR ,  HANBING WU

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/3414 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/345

Abstract: Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.

公开(公告)号：US20200051794A1

公开(公告)日：2020-02-13

申请号：US16529211

申请日：2019-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHA K. SUBRAMANI ,  PRABURAM RAJA ,  STEVEN V. SANSONI ,  JOHN FORSTER ,  PHILIP KRAUS ,  YANG GUO ,  PRASHANTH KOTHNUR ,  FARZAD HOUSHMAND ,  BENCHERKI MEBARKI ,  JOHN JOSEPH MAZZOCCO ,  THOMAS BREZOCZKY

IPC: H01J37/34 ,  B08B7/00

Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

公开(公告)号：US20180240655A1

公开(公告)日：2018-08-23

申请号：US15890694

申请日：2018-02-07

Applicant: APPLIED MATERIALS, INC.

Inventor： HANBING WU ,  ANANTHA K. SUBRAMANI ,  ASHISH GOEL ,  XIAODONG WANG ,  WEI W. WANG ,  RONGJUN WANG ,  CHI HONG CHING

IPC: H01J37/34 ,  H01L43/12

CPC classification number: H01J37/3441 ,  H01J37/3429 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.