公开(公告)号：US20240128061A1

公开(公告)日：2024-04-18

申请号：US18233760

申请日：2023-08-14

Applicant: Applied Materials, Inc.

Inventor： FARZAD HOUSHMAND ,  KELVIN CHAN ,  RUIYING HAO ,  WAYNE FRENCH

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32357 ,  H01J37/32449 ,  H01J2237/20214 ,  H01J2237/334

Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a pedestal, an annular separator over the pedestal to define a first domain within the annular separator and a second domain outside of the annular separator, a first gas inlet within the annular separator, and a second gas inlet outside of the annular separator.

公开(公告)号：US20190353919A1

公开(公告)日：2019-11-21

申请号：US16414975

申请日：2019-05-17

Applicant: APPLIED MATERIALS, INC.

Inventor： BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  FARZAD HOUSHMAND ,  ANANTHA SUBRAMANI ,  KEITH MILLER ,  XIANMIN TANG ,  PRASHANTH KOTHNUR

IPC: G02B27/30 ,  H01J37/34

Abstract: Multi-zone collimators and process chambers including multi-zone collimators for use with a multi-zone magnetron source are provided herein. In some embodiments, a multi-zone collimator for use with a multi-zone magnetron source, comprising a first collimator plate, a second collimator plate, wherein a first collimator zone having a first width is formed between the first collimator plate and the second collimator plate; and a third collimator plate, wherein a second collimator zone having a second width is formed between the second first collimator plate and the third collimator plate, wherein a length of each of the first, second and third collimator plates are different from each other.

公开(公告)号：US20230124304A1

公开(公告)日：2023-04-20

申请号：US17903892

申请日：2022-09-06

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  RUIYING HAO ,  WAYNE FRENCH ,  FARZAD HOUSHMAND

IPC: C23C16/455 ,  C23C14/54 ,  C23C16/52

Abstract: Embodiments include a gas distribution assembly for a semiconductor processing chamber. In an embodiment, the gas distribution assembly comprises a flow ratio controller (FRC). In an embodiment, a first line from the FRC goes to an ampoule, and a second line from the FRC goes to a main line. In an embodiment, a third line from the ampoule goes to the main line. In an embodiment, a mass flow meter is coupled to the main line.

公开(公告)号：US20200051794A1

公开(公告)日：2020-02-13

申请号：US16529211

申请日：2019-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHA K. SUBRAMANI ,  PRABURAM RAJA ,  STEVEN V. SANSONI ,  JOHN FORSTER ,  PHILIP KRAUS ,  YANG GUO ,  PRASHANTH KOTHNUR ,  FARZAD HOUSHMAND ,  BENCHERKI MEBARKI ,  JOHN JOSEPH MAZZOCCO ,  THOMAS BREZOCZKY

IPC: H01J37/34 ,  B08B7/00

Abstract: Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.