SUBSTRATE SUPPORT FOR PLASMA ETCH OPERATIONS
    1.
    发明申请
    SUBSTRATE SUPPORT FOR PLASMA ETCH OPERATIONS 审中-公开
    基板支持等离子体蚀刻操作

    公开(公告)号:US20140262043A1

    公开(公告)日:2014-09-18

    申请号:US13798028

    申请日:2013-03-12

    Abstract: Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.

    Abstract translation: 本文公开了处理衬底的方法和设备。 在一些实施例中,用于在处理室中支撑衬底的衬底支撑件包括介电绝缘板; 所述导电板包括顶表面和底表面,所述导电板限定所述顶表面和所述底表面之间的厚度,其中所述导电板的边缘部分在径向向外的方向上逐渐变细; 以及电介质板,其包括设置在所述导体板的顶表面上的衬底支撑表面。

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