公开(公告)号：US11670513B2

公开(公告)日：2023-06-06

申请号：US17227327

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Junqi Wei ,  Wen Long Favier Shoo ,  Ananthkrishna Jupudi ,  Takashi Shimizu ,  Kelvin Boh ,  Tuck Foong Koh

IPC: H01L21/02 ,  H01L21/30 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/3003 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US11328929B2

公开(公告)日：2022-05-10

申请号：US16399478

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Junqi Wei ,  Wen Long Favier Shoo ,  Ananthkrishna Jupudi ,  Takashi Shimizu ,  Kelvin Boh ,  Tuck Foong Koh

IPC: H01L21/311 ,  H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.