公开(公告)号：US20210175101A1

公开(公告)日：2021-06-10

申请号：US16707945

申请日：2019-12-09

Applicant: APPLIED MATERIALS, INC.

Inventor： JI-DIH HU ,  WOLFGANG R. ADERHOLD ,  DONGMING IU

IPC: H01L21/67 ,  G01K7/01

Abstract: An apparatus for measuring a temperature of an assembly that is internal to a process chamber. The apparatus may include a light pipe positioned between a lamp radiation filtering window and the assembly, the light pipe has a first end with a bevel configured to redirect infrared radiation emitted from the assembly through the light pipe and has a second end distal to the first end, an optical assembly configured to collimate, filter, and focus infrared radiation from the second end of the light pipe, an optical detector configured to receive an output from the optical assembly and generate at least one signal representative of the infrared radiation, a temperature circuit that transforms the at least one signal into a temperature value, and a controller that is configured to receive the temperature value and to make adjustments to other process parameters of process chamber based on the temperature value.

公开(公告)号：US20220246453A1

公开(公告)日：2022-08-04

申请号：US17728461

申请日：2022-04-25

Applicant: APPLIED MATERIALS, INC.

Inventor： JI-DIH HU ,  WOLFGANG R. ADERHOLD ,  DONGMING IU

IPC: H01L21/67 ,  G01K7/01

Abstract: An apparatus for measuring a temperature of an assembly that is internal to a process chamber. The apparatus may include a light pipe positioned between a lamp radiation filtering window and the assembly, the light pipe has a first end with a bevel configured to redirect infrared radiation emitted from the assembly through the light pipe and has a second end distal to the first end, an optical assembly configured to collimate, filter, and focus infrared radiation from the second end of the light pipe, an optical detector configured to receive an output from the optical assembly and generate at least one signal representative of the infrared radiation, a temperature circuit that transforms the at least one signal into a temperature value, and a controller that is configured to receive the temperature value and to make adjustments to other process parameters of process chamber based on the temperature value.

公开(公告)号：US20200161134A1

公开(公告)日：2020-05-21

申请号：US16577353

申请日：2019-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： BENJAMIN COLOMBEAU ,  WOLFGANG R. ADERHOLD ,  ANDY LO ,  YI-CHIAU HUANG

IPC: H01L21/225 ,  H01L21/02 ,  H01L21/324 ,  H01L29/66

Abstract: Methods and apparatus for forming doped material layers in semiconductor devices using an integrated selective monolayer doping (SMLD) process. A concentration of dopant is deposited on a material layer using the SMLD process and the concentration of dopant is then annealed to diffuse the concentration of dopant into the material layer. The SMLD process conforms the concentration of dopant to a surface of the material layer and may be performed in a single CVD chamber. The SMLD process may also be repeated to further alter the diffusion parameters of the dopant into the material layer. The SMLD process is compatible with p-type dopant species and n-type dopant species.