公开(公告)号：US20240234099A1

公开(公告)日：2024-07-11

申请号：US18610723

申请日：2024-03-20

Applicant: Tokyo Electron Limited

Inventor： Michishige Saito ,  Kazuya Nagaseki ,  Shota Kaneko

IPC: H01J37/32 ,  B28B1/00

CPC classification number: H01J37/32495 ,  B28B1/001 ,  H01J37/32559 ,  H01J37/32724 ,  H01J37/32807 ,  H01J2237/332 ,  H01J2237/334

Abstract: A forming method of a component for use in a plasma processing apparatus includes irradiating, while supplying a source material of a first ceramic and a source material of a second ceramic different from the first ceramic, an energy beam to the source material of the first ceramic and the source material of the second ceramic.

公开(公告)号：US20240186120A1

公开(公告)日：2024-06-06

申请号：US17787689

申请日：2022-05-24

Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

Inventor： Zhiyuan LI ,  Xianfu ZENG

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/3255 ,  H01J37/32559 ,  H01J2237/032 ,  H01J2237/334

Abstract: The present disclosure provides an electrode fixing assembly and a dry etching device. The electrode fixing assembly includes a first fixing element and a second fixing element, wherein a hardness of a material of the first fixing element is greater than a hardness of a material of the second fixing element. The electrode fixing assembly is configured to be arranged in the dry etching device to fix an upper electrode on a device body, a generation of particles is reduced or eliminated, and then problems such as poor etching or the like caused by a substrate to be etched covered by the particles are avoided.

公开(公告)号：US11875976B2

公开(公告)日：2024-01-16

申请号：US16933146

申请日：2020-07-20

Applicant: AGC FLAT GLASS NORTH AMERICA, INC. ,  AGC GLASS EUROPE ,  ASAHI GLASS CO., LTD.

Inventor： John Chambers ,  Peter Maschwitz ,  Yuping Lin ,  Herb Johnson

IPC: H01J37/32 ,  C03C17/245 ,  C23C16/50

CPC classification number: H01J37/32559 ,  C03C17/245 ,  C23C16/50 ,  H01J37/32596 ,  C03C2218/153 ,  H01J2237/3321

Abstract: The present invention relates generally to a plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction for deposition of thin film coatings and modification of surfaces. More particularly, the present invention relates to a plasma source comprising one or more plasma-generating electrodes, wherein a macro-particle reduction coating is deposited on at least a portion of the plasma-generating surfaces of the one or more electrodes to shield the plasma-generating surfaces of the electrodes from erosion by the produced plasma and to resist the formation of particulate matter, thus enhancing the performance and extending the service life of the plasma source.

公开(公告)号：US11664198B2

公开(公告)日：2023-05-30

申请号：US16831032

申请日：2020-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirofumi Ohta ,  Hidetoshi Hanaoka ,  Ayuta Suzuki

IPC: H01J37/32 ,  H01L21/68

CPC classification number: H01J37/32642 ,  H01J37/32559 ,  H01J37/32715 ,  H01J2237/038

Abstract: A plasma processing apparatus includes a conductive mounting table, a conductive member, and a first insulating member. The conductive mounting table has a mounting portion on which a substrate is mounted and a stepped portion positioned lower than the mounting portion. The conductive member is disposed on the stepped portion and extends outward over an outer periphery of the mounting table. Further, a first insulating member is disposed on or above an upper surface of the conductive member.

公开(公告)号：US11646182B2

公开(公告)日：2023-05-09

申请号：US16940354

申请日：2020-07-27

Applicant: JIANGSU FAVORED NANOTECHNOLOGY CO., LTD.

Inventor： Jian Zong

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50

CPC classification number: H01J37/32779 ,  C23C16/4584 ,  C23C16/4588 ,  C23C16/50 ,  H01J37/32449 ,  H01J37/32559 ,  H01J37/32715

Abstract: A coating apparatus for coating a plurality of substrates includes a chamber body having a reaction chamber, a monomer discharge source having a discharge inlet for introducing a coating forming material into the reaction chamber of the chamber body, and a plasma generation source disposed at a central area of the reaction chamber of the chamber body for exciting the coating forming material, wherein the plurality of substrates is adapted for being arranged around the plasma generation source within the chamber body, so that the uniformity of the coatings formed on the surfaces of the substrates is enhanced, and the deposition velocity is increased.

公开(公告)号：US20180294147A1

公开(公告)日：2018-10-11

申请号：US15942622

申请日：2018-04-02

Applicant: Tokyo Electron Limited

Inventor： Hidetoshi Hanaoka

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32559 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32651 ,  H01J37/32697 ,  H01L21/31116

Abstract: A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode.

公开(公告)号：US20180197722A1

公开(公告)日：2018-07-12

申请号：US15403039

申请日：2017-01-10

Applicant: Lam Research Corporation

Inventor： Maolin LONG

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32559 ,  H01J37/3211 ,  H01J37/32137 ,  H01J37/32541 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/334

Abstract: A cathode assembly for use in a plasma processing chamber is provided. A metal bowl that is grounded is provided. An insulator of a sealed porous or sealed honeycomb dielectric ceramic with an equivalent dielectric constant k

公开(公告)号：US09966233B2

公开(公告)日：2018-05-08

申请号：US14382898

申请日：2013-04-04

Applicant: Tokyo Electron Limited

Inventor： Hidetoshi Hanaoka

IPC: C23C16/00 ,  H01L21/00 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32559 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32651 ,  H01J37/32697 ,  H01L21/31116

Abstract: A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode.

公开(公告)号：US20170345666A1

公开(公告)日：2017-11-30

申请号：US15605531

申请日：2017-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya MORIKITA ,  Ryosuke NIITSUMA ,  Weichien CHEN

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/308 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/3341 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

Abstract: Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask.

公开(公告)号：US20170200587A1

公开(公告)日：2017-07-13

申请号：US15399084

申请日：2017-01-05

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Jun XUE ,  Sang Ki NAM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32082 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32559 ,  H01J37/32568 ,  H01J2237/334 ,  H01L21/3065

Abstract: Implementations described herein relate to apparatus and methods for performing atomic layer etching (ALE). Pulsed plasma generation and subsequent bias application to plasma afterglow may provide for improved ALE characteristics. Apparatus described herein provide for plasma generation from one or more plasma sources and biasing of plasma afterglow to facilitate material removal from a substrate.