公开(公告)号：US09720434B2

公开(公告)日：2017-08-01

申请号：US14731250

申请日：2015-06-04

Applicant: ARM Limited

Inventor： James Edward Myers ,  David Walter Flynn ,  David William Howard

IPC: H03K19/0175 ,  G05F3/08 ,  G06F17/50 ,  G06F1/32 ,  H03K19/00

CPC classification number: G05F3/08 ,  G06F1/26 ,  G06F1/3287 ,  G06F17/5068 ,  H03K19/0016 ,  Y02D10/171

Abstract: An electronic device 2 has circuitry 4 which operates in a first voltage domain 6 supplied with a first voltage level VDD1 and a reference voltage level. A voltage regulator 14 generates the first voltage level VDD1 from a second voltage level VDD2 higher than the first voltage level VDD1. At least one power gate 20, 30 is provided for selectively coupling the circuitry 4 to one of the first voltage level VDD1 or the reference level. The control signal 22 for the power gate 20, 30 is generated in a second voltage domain supplied with a higher voltage level VDD2 or VDD3 derived from the second voltage level VDD2 supplied to the voltage regulator 14. Hence, an existing high voltage source within the device 2 can be reused for applying a boosted voltage to power gates to improve efficiency of power gating.

公开(公告)号：US20150355662A1

公开(公告)日：2015-12-10

申请号：US14731250

申请日：2015-06-04

Applicant: ARM Limited

Inventor： James Edward Myers ,  David Walter Flynn ,  David William Howard

IPC: G05F3/08 ,  G06F17/50

CPC classification number: G05F3/08 ,  G06F1/26 ,  G06F1/3287 ,  G06F17/5068 ,  H03K19/0016 ,  Y02D10/171

Abstract: An electronic device 2 has circuitry 4 which operates in a first voltage domain 6 supplied with a first voltage level VDD1 and a reference voltage level. A voltage regulator 14 generates the first voltage level VDD1 from a second voltage level VDD2 higher than the first voltage level VDD1. At least one power gate 20, 30 is provided for selectively coupling the circuitry 4 to one of the first voltage level VDD1 or the reference level. The control signal 22 for the power gate 20, 30 is generated in a second voltage domain supplied with a higher voltage level VDD2 or VDD3 derived from the second voltage level VDD2 supplied to the voltage regulator 14. Hence, an existing high voltage source within the device 2 can be reused for applying a boosted voltage to power gates to improve efficiency of power gating.

Abstract translation: 电子设备2具有电路4，其在被提供有第一电压电平VDD1和参考电压电平的第一电压域6中工作。 电压调节器14从高于第一电压电平VDD1的第二电压电平VDD2产生第一电压电平VDD1。 提供至少一个电源门20,30用于选择性地将电路4耦合到第一电压电平VDD1或参考电平之一。 用于功率门20,30的控制信号22在提供有从提供给电压调节器14的第二电压电平VDD2导出的较高电压电平VDD2或VDD3的第二电压域中产生。因此，现有的高压源 器件2可以重新用于将升压电压施加到电源门以提高电源门控的效率。