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1.发明授权Glass substrate for Cu-In-Ga-Se solar cell and solar cell using same 有权Cu-In-Ga-Se太阳能电池用玻璃基板及使用其的太阳能电池公开(公告)号：US08895463B2
公开(公告)日：2014-11-25
申请号：US13751764
申请日：2013-01-28
发明人： Yutaka Kuroiwa , Yuichi Yamamoto , Tomomi Abe , Tetsuya Nakashima , Yasushi Kawamoto , Shigeru Niki , Shogo Ishizuka
IPC分类号： C03C3/083 , C03C3/085 , H01L31/0232 , H01L31/032 , C03C3/087 , C03C23/00 , H01L31/048
CPC分类号： H01L31/02327 , C03C3/087 , C03C23/008 , H01L31/0322 , H01L31/0488 , Y02E10/541
摘要： A glass substrate for a CIGS solar cell, having high cell efficiency and high glass transition temperature is provided. The glass substrate for a vapor-deposited CIGS film solar cell has a glass transition temperature of at least 580° C. and an average thermal expansion coefficient of from 70×10−7 to 100×10−7/° C., wherein the ratio of the average total amount of Ca, Sr and Ba within from 10 to 40 nm in depth from the surface of the glass substrate to the total amount of Ca, Sr and Ba at 5,000 nm in depth from the surface of the glass substrate is at most 0.35, and the ratio of the average Na amount within from 10 to 40 nm in depth from the surface of the glass substrate after heat treatment to such average Na amount before the heat treatment is at least 1.5.
摘要翻译： 提供了具有高电池效率和高玻璃化转变温度的CIGS太阳能电池用玻璃基板。 蒸镀CIGS膜太阳能电池用玻璃基板的玻璃化转变温度为580℃以上，平均热膨胀系数为70×10 -7〜100×10 -7 /℃，其中， 玻璃基板表面的深度为10〜40nm的Ca，Sr，Ba的平均总量与玻璃基板表面的深度为5000nm的Ca，Sr，Ba的总量的比例为 0.35以下，热处理后的玻璃基板的表面的深度的平均Na量与热处理前的平均Na量的比例为1.5以上。
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2.发明申请GLASS SUBSTRATE FOR CU-IN-GA-SE SOLAR CELL AND SOLAR CELL USING SAME 有权用于CU-IN-GA-SE太阳能电池和使用相同的太阳能电池的玻璃基板公开(公告)号：US20130160845A1
公开(公告)日：2013-06-27
申请号：US13751764
申请日：2013-01-28
发明人： Yutaka KUROIWA , Yuichi Yamamoto , Tomomi Abe , Tetsuya Nakashima , Yasushi Kawamoto , Shigeru Niki , Shogo Ishizuka
IPC分类号： H01L31/0232 , H01L31/032
CPC分类号： H01L31/02327 , C03C3/087 , C03C23/008 , H01L31/0322 , H01L31/0488 , Y02E10/541
摘要： A glass substrate for a CIGS solar cell, having high cell efficiency and high glass transition temperature is provided. The glass substrate for a vapor-deposited CIGS film solar cell has a glass transition temperature of at least 580° C. and an average thermal expansion coefficient of from 70×10−7 to 100×10−7/° C., wherein the ratio of the average total amount of Ca, Sr and Ba within from 10 to 40 nm in depth from the surface of the glass substrate to the total amount of Ca, Sr and Ba at 5,000 nm in depth from the surface of the glass substrate is at most 0.35, and the ratio of the average Na amount within from 10 to 40 nm in depth from the surface of the glass substrate after heat treatment to such average Na amount before the heat treatment is at least 1.5.
摘要翻译： 提供了具有高电池效率和高玻璃化转变温度的CIGS太阳能电池用玻璃基板。 蒸镀CIGS膜太阳能电池用玻璃基板的玻璃化转变温度为580℃以上，平均热膨胀系数为70×10 -7〜100×10 -7 /℃，其中， 玻璃基板表面的深度为10〜40nm的Ca，Sr，Ba的平均总量与玻璃基板表面的深度为5000nm的Ca，Sr，Ba的总量的比例为 0.35以下，热处理后的玻璃基板的表面的深度的平均Na量与热处理前的平均Na量的比例为1.5以上。
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