公开(公告)号：US20240124981A1

公开(公告)日：2024-04-18

申请号：US18377885

申请日：2023-10-09

Applicant: ASM IP Holding B.V.

Inventor： Arun Thottappayil ,  DongRak Jung ,  JongSu Kim

IPC: C23C16/455

CPC classification number: C23C16/45565

Abstract: A gas inlet tube assembly is presented. The assembly comprising a first inlet configured to insert a first process gas and a second inlet configured to insert a second process gas; a gas inlet tube configured to mix the first process gas from the first inlet and the second process gas from the second inlet, the gas inlet tube being in fluid communication with a reaction chamber of the substrate processing apparatus, comprising upper and lower segments, wherein the first inlet and the second inlet are placed in the upper segment of the gas inlet tube and face with each other directly opposite, the upper segment is converging cone shape, the lower segment is diverging cone shape, the ratio of the length of the upper segment bottom to the length of the lower segment bottom can be 0.1˜0.9, preferably 0.15˜0.25.

公开(公告)号：US20230411176A1

公开(公告)日：2023-12-21

申请号：US18210739

申请日：2023-06-16

Applicant: ASM IP Holding B.V.

Inventor： Arun Thottappayil ,  DongRak Jeong

IPC: H01L21/67

CPC classification number: H01L21/67017

Abstract: Apparatus, particularly reaction chamber for processing semiconductor substrate is presented. A reaction chamber with gas exit flow control capability comprises an upper body, a substrate supporting part, a shower head for letting in gas which is used for processing the substrate, a lower body comprising duct, wherein the duct has a multiple of duct holes and a flow control liner configured to surround the duct and the flow control liner has a multiple of flow holes, wherein the duct holes and flow holes are used to control the exit flow of the gas used for substrate processing, and the flow control liner may rotate around so that the duct holes and the flow holes can be overlapped. The duct can have scribe mark for various hole sizes and shapes.