公开(公告)号：US20240213022A1

公开(公告)日：2024-06-27

申请号：US18545699

申请日：2023-12-19

Applicant: ASM IP Holding B.V.

Inventor： Brendan Marozas ,  Rami Khazaka ,  Gregory Deye

IPC: H01L21/02 ,  C30B25/16 ,  C30B25/20 ,  C30B29/06 ,  H01L21/3065

CPC classification number: H01L21/0257 ,  C30B25/165 ,  C30B25/205 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/30655

Abstract: A method for epitaxially growing a phosphorus doped silicon layer on a substrate is disclosed. Embodiments of the presently described method comprise exposing a substrate to a silicon precursor and to a phosphorus precursor, wherein the exposure of the substrate to the phosphorus precursor is done during an overlapping period with the exposure to the silicon precursor.