SUBSTRATE PROCESSING APPARATUS
    1.
    发明申请

    公开(公告)号:US20230071798A1

    公开(公告)日:2023-03-09

    申请号:US17892780

    申请日:2022-08-22

    Abstract: A top lid capable of minimizing thermal deformation when a substrate processing temperature increases includes a support for supporting the top lid, the support protruding integrally from one surface of the top lid.

    WAFER PROCESSING APPARATUS WITH FILM UNIFORMITY IMPROVEMENT CAPABILITIES

    公开(公告)号:US20240287679A1

    公开(公告)日:2024-08-29

    申请号:US18585313

    申请日:2024-02-23

    CPC classification number: C23C16/46 H01L21/67109

    Abstract: A wafer processing apparatus may be presented. The apparatus may comprise a wafer support provided with a heater for supporting and heating the wafer, a chamber for enclosing and processing the wafer, a showerhead for letting gas in the chamber, a pumping port for removing gas from the chamber, a black wall with a substantially high emissivity provided to the chamber near the pumping port and configured to partly encircle the wafer support; and a white wall with a substantially low emissivity provided to the chamber on opposite side of the pumping port and configured to partly encircle the wafer support.

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