公开(公告)号：US20160240373A1

公开(公告)日：2016-08-18

申请号：US14621174

申请日：2015-02-12

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael Givens ,  Qi Xie ,  Jan Willem Maes ,  Bert Jongbloed ,  Radko G. Bankras ,  Theodorus G.M. Oosterlaken ,  Dieter Pierreux ,  Werner Knaepen ,  Harald B. Profijt ,  Cornelius A. van der Jeugd

IPC: H01L21/02

CPC classification number: H01L21/02236 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02238

Abstract: In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° C. or less. The exposure to the hydrogen peroxide may continue until the oxide layer grows by a thickness of about 1 Å or more. Where the substrate is a germanium substrate, while oxidation using H2O has been found to form germanium oxide with densities of about 4.25 g/cm3, oxidation according to some embodiments can form an oxide layer with a density of about 6 g/cm3 or more (for example, about 6.27 g/cm3). In some embodiments, another layer of material is deposited directly on the oxide layer. For example, a dielectric layer may be deposited directly on the oxide layer.

Abstract translation: 在一些实施例中，通过在约500℃或更低的工艺温度下暴露于过氧化氢来氧化半导体衬底，在半导体衬底上生长氧化物层。 暴露于过氧化氢可持续到氧化层生长约1埃以上的厚度。 当衬底是锗衬底时，虽然已经发现使用H 2 O的氧化形成密度为4.25g / cm 3的氧化锗，但是根据一些实施方案的氧化可以形成密度为约6g / cm 3或更高的氧化物层 例如约6.27g / cm 3）。 在一些实施例中，另一层材料直接沉积在氧化物层上。 例如，介电层可以直接沉积在氧化物层上。