公开(公告)号：US20250122610A1

公开(公告)日：2025-04-17

申请号：US18914403

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Ranjit Borude ,  Imane Abdellaoui ,  Viljami Pore ,  Ikhlas Rahmat

IPC: C23C16/04 ,  C23C16/34 ,  C23C16/40

Abstract: Disclosed are methods and systems for filing a gap. An exemplary method comprises providing a substrate in a reaction chamber. The substrate comprises at least one gap. The method further comprises depositing a layer into the gap. The layer has a first volume. Finally, the method further comprises converting the layer into a converted layer. The converted layer has a second volume. The second volume is greater than the first volume. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20240209499A1

公开(公告)日：2024-06-27

申请号：US18534817

申请日：2023-12-11

Applicant: ASM IP Holding B.V.

Inventor： Miguel Sérgio De Abreu Neto ,  Jihee Jeon ,  Imane Abdellaoui ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/342 ,  C23C16/45538 ,  C23C16/56

Abstract: Methods and systems for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods and systems that can be used for depositing a boron nitride film by a PECVD process.