公开(公告)号：US20230399745A1

公开(公告)日：2023-12-14

申请号：US18205766

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Makoto Igarashi ,  Ranjit Borude

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32091 ,  C23C16/511 ,  C23C16/505

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.

公开(公告)号：US20230298885A1

公开(公告)日：2023-09-21

申请号：US18185625

申请日：2023-03-17

Applicant: ASM IP Holding, B.V.

Inventor： Ranjit Borude ,  Shinya Yoshimoto ,  Makoto Igarashi ,  Jhoelle Roche Guhit ,  Pamarti Viswanath

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02348 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02222 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32357 ,  H01J2237/332 ,  H01J37/32733

Abstract: Methods and related systems for at least partially filling recesses comprised in a substrate with a gap filling fluid. The gap filling fluid comprises a Si—N bond. The methods comprise exposing the substrate to a nitrogen and hydrogen-containing gas on the one hand and to vacuum ultraviolet light on the other hand.

公开(公告)号：US20250006489A1

公开(公告)日：2025-01-02

申请号：US18754246

申请日：2024-06-26

Applicant: ASM IP Holding B.V.

Inventor： Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Viljami Pore ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/517 ,  H01J37/32

Abstract: The disclosure relates to methods of depositing a material comprising silicon in a gap. The method comprises providing a substrate, the substrate comprising the gap, wherein the gap comprises an inner surface and exposing the substrate to a first plasma having high ion energy to modify predetermined areas of the gap inner surface. The method further comprises exposing the substrate to a second plasma having low ion energy to passivate the modified areas of the gap surface to form passivated modified areas on the gap surface and contacting the substrate with a vapor-phase silicon precursor to chemisorb the silicon precursor on unmodified areas of the gap for depositing material comprising silicon on the unmodified areas. The current disclosure further relates to a method of controlling chemisorption of a vapor-phase silicon precursor on a substrate, and to a semiconductor processing assembly for performing the methods according to the current disclosure.

公开(公告)号：US12027365B2

公开(公告)日：2024-07-02

申请号：US17530983

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Sunja Kim ,  Viljami Pore ,  Jia Li Yao ,  Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32 ,  H01L21/762

CPC classification number: H01L21/02315 ,  C23C16/0254 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76224 ,  H01J37/32082 ,  H01J2237/332

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

公开(公告)号：US20220165569A1

公开(公告)日：2022-05-26

申请号：US17530983

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Sunja Kim ,  Viljami Pore ,  Jia Li Yao ,  Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  H01L21/762 ,  H01J37/32 ,  C23C16/40 ,  C23C16/02 ,  C23C16/455

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.