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公开(公告)号：US20240194448A1
公开(公告)日：2024-06-13
申请号：US18534250
申请日：2023-12-08
发明人： Geun Young YEOM , Ho Gon KIM , Hyun Woo TAK , Jong Woo HONG , Ji Eun KANG
IPC分类号： H01J37/32 , C23C16/455 , H01L21/02
CPC分类号： H01J37/32183 , C23C16/45538 , H01J37/3244 , H01L21/02274 , H01L21/0228 , H01J2237/332 , H01L21/0214 , H01L21/02164 , H01L21/0217
摘要： One embodiment of the present invention provides an atomic layer deposition device for filling a gap of a semiconductor structure with a high aspect ratio and a method of manufacturing the same. According to the atomic layer deposition method of filling the gap of the semiconductor structure with the high aspect ratio according to one embodiment of the present invention, it is possible to remove an overhang at an pattern top at the same time as deposition and perform the gap-filling to remove a void and a seam by improving bottom-up deposition in a high aspect ratio structure of 40:1 or more.
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公开(公告)号：US20240093366A1
公开(公告)日：2024-03-21
申请号：US18515031
申请日：2023-11-20
发明人： MING LI , XINJIAN LEI , RAYMOND N. VRTIS , ROBERT G. RIDGEWAY , MANCHAO XIAO
IPC分类号： C23C16/455 , C23C16/32 , C23C16/36 , C23C16/50
CPC分类号： C23C16/45553 , C23C16/325 , C23C16/36 , C23C16/45538 , C23C16/50 , C23C16/4408
摘要： Described herein are compositions and methods of forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate, the method comprising introducing into a reactor at least one silacycloalkane precursor selected from the group consisting of compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB:
as defined herein.-
3.发明申请公开(公告)号：US20190249303A1
公开(公告)日：2019-08-15
申请号：US16252567
申请日：2019-01-18
申请人： ASM IP Holding B.V.
发明人： Aurélie Kuroda , Atsuki Fukazawa
IPC分类号： C23C16/455 , C23C16/40
CPC分类号： C23C16/45553 , C07F7/0838 , C07F7/10 , C23C16/402 , C23C16/45538
摘要： A chemical precursor and a method for depositing a silicon oxide film on a surface of a substrate within a reaction space by plasma-enhanced atomic layer deposition are disclosed. The chemical precursors may include a Si—O—Si skeleton or a Si—N—Si skeleton.
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公开(公告)号：US20180163302A1
公开(公告)日：2018-06-14
申请号：US15809767
申请日：2017-11-10
IPC分类号： C23C16/455 , C23C16/505 , C23C16/52 , H01J37/32 , H01L21/02
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45536 , C23C16/45538 , C23C16/505 , C23C16/52 , H01J37/32082 , H01J37/32155 , H01J37/32183 , H01J37/3244 , H01J37/32889 , H01J37/32899 , H01J37/32935 , H01J2237/3321 , H01L21/0262
摘要： Apparatuses for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the apparatuses, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.
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公开(公告)号：US09738972B2
公开(公告)日：2017-08-22
申请号：US14837612
申请日：2015-08-27
发明人： Adrien LaVoie , Hu Kang , Karl Leeser
IPC分类号： C23C16/455 , C23C16/40 , C23C16/507 , C23C16/509 , C23C16/517
CPC分类号： C23C16/4554 , C23C16/401 , C23C16/455 , C23C16/45536 , C23C16/45538 , C23C16/45542 , C23C16/507 , C23C16/509 , C23C16/517
摘要： A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate, supplying a first power level sufficient to promote rearrangement of molecules on a surface of the substrate, waiting a first predetermined period, and, after the first predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying a second power level for a second predetermined period. The second power level is greater than the first power level. The method further includes removing reactants from the process chamber.
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公开(公告)号：US09714467B2
公开(公告)日：2017-07-25
申请号：US14613656
申请日：2015-02-04
发明人： Hitoshi Kato , Jun Sato , Masahiro Murata , Kentaro Oshimo , Tomoko Sugano , Shigehiro Miura
IPC分类号： C23C16/458 , C23C16/44 , C23C16/52 , H01L21/02 , C23C16/34 , C23C16/455 , C23C16/507
CPC分类号： C23C16/4584 , C23C16/345 , C23C16/45519 , C23C16/45538 , C23C16/45551 , C23C16/507 , C23C16/52 , H01L21/0217 , H01L21/02274 , H01L21/0228
摘要： A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.
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公开(公告)号：US20150368797A1
公开(公告)日：2015-12-24
申请号：US14837612
申请日：2015-08-27
发明人： Adrien LaVoie , Hu Kang , Karl Leeser
IPC分类号： C23C16/455
CPC分类号： C23C16/4554 , C23C16/401 , C23C16/455 , C23C16/45536 , C23C16/45538 , C23C16/45542 , C23C16/507 , C23C16/509 , C23C16/517
摘要： A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate, supplying a first power level sufficient to promote rearrangement of molecules on a surface of the substrate, waiting a first predetermined period, and, after the first predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying a second power level for a second predetermined period. The second power level is greater than the first power level. The method further includes removing reactants from the process chamber.
摘要翻译： 一种在衬底处理系统中处理衬底的方法，包括将反应物气体流入包括衬底的处理室中，提供足以促进衬底表面上的分子重排的第一功率水平，等待第一预定周期，以及之后 第一预定周期，通过在第二预定周期提供第二功率电平的同时供给一种或多种前体，在衬底上进行等离子体增强的脉冲化学气相沉积。 第二功率电平大于第一功率电平。 该方法还包括从处理室去除反应物。
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公开(公告)号：US20150110968A1
公开(公告)日：2015-04-23
申请号：US14060075
申请日：2013-10-22
发明人： Adrien LaVoie , Hu Kang , Karl Leeser
IPC分类号： C23C16/455
CPC分类号： C23C16/4554 , C23C16/401 , C23C16/455 , C23C16/45536 , C23C16/45538 , C23C16/45542 , C23C16/507 , C23C16/509 , C23C16/517
摘要： A method includes flowing reactant gases into a process chamber. Plasma having a first power level is supplied using a plasma source. The process chamber is dosed with the precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of the substrate and is insufficient to decompose the precursor that is adsorbed. After a first predetermined period, the method includes removing a portion of the precursor that does not adsorb onto the substrate. The precursor that is adsorbed is activated using plasma having a second power level using the plasma source. The second power level is greater than the first power level and is sufficient to decompose the precursor.
摘要翻译： 一种方法包括将反应气体流入处理室。 使用等离子体源来提供具有第一功率电平的等离子体。 处理室配有前体。 第一功率水平足以增强前体在基底表面上的吸附，并且不足以分解被吸附的前体。 在第一预定时间段之后，该方法包括去除不吸附到基底上的前体的一部分。 使用等离子体源的具有第二功率电平的等离子体来激活吸附的前体。 第二功率水平大于第一功率水平并且足以分解前体。
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公开(公告)号：US08974868B2
公开(公告)日：2015-03-10
申请号：US11084176
申请日：2005-03-21
IPC分类号： H05H1/00 , C23C16/455 , H01J37/32 , C23C16/34 , H01L21/768 , C23C16/30 , H01L21/314 , H01L21/285 , H01L21/3205 , C23C16/14 , C23C16/509 , H01L21/316 , H01L21/318
CPC分类号： H01L21/76843 , C23C16/14 , C23C16/303 , C23C16/34 , C23C16/45538 , C23C16/45544 , C23C16/5096 , H01J37/32082 , H01J37/32192 , H01J2237/335 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/318 , H01L21/32051
摘要： A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.
摘要翻译： 一种用于处理衬底的方法包括将衬底设置在沉积室中，其被配置为执行沉积工艺，并使用沉积工艺在衬底上沉积膜。 然后将其上具有膜的基板从沉积室转移到处理室中，并且在处理室中的基板上进行等离子体清洁处理。 在等离子体清洗处理之后进行基板的进一步处理。
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公开(公告)号：US08871654B2
公开(公告)日：2014-10-28
申请号：US13934548
申请日：2013-07-03
发明人： Hitoshi Kato , Shigehiro Miura
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C23C16/46
CPC分类号： H01L21/02233 , C23C16/402 , C23C16/45538 , C23C16/45551 , C23C16/46 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/02565
摘要： A film deposition apparatus forming a thin film by after repeating cycles of sequentially supplying gases to a substrate on a turntable inside a vacuum chamber that includes a first supplying portion for causing the substrate to absorb a first gas containing silicon; a second supplying portion apart from the first supplying portion for supplying a second gas containing active species to produce a silicone dioxide; a separating area between the first and second supplying portions for preventing their mixture; a main heating mechanism for heating the substrate; and an auxiliary mechanism including a heat lamp above the turntable and having a wavelength range absorbable by the substrate to directly heat to be a processing temperature at which an ozone gas is thermally decomposed, wherein a maximum temperature is lower than the thermally decomposed temperature, at which, the first gas is absorbed and oxidized by the second gas.
摘要翻译： 一种成膜装置，其通过在包括用于使基板吸收包含硅的第一气体的第一供应部分的真空室内的转台上顺序地向基板供应气体的循环的循环之后形成薄膜; 第二供应部分，与第一供应部分分开，用于供应含有活性物质的第二气体以产生二氧化硅; 在第一和第二供应部分之间的分离区域，用于防止它们的混合; 用于加热基板的主加热机构; 以及辅助机构，其包括位于所述转盘上方的加热灯，并且具有可被所述基板吸收的波长范围，以直接加热为臭氧气体被热分解的处理温度，其中最高温度低于所述热分解温度， 第一气体被第二气体吸收和氧化。
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