公开(公告)号：US20200002812A1

公开(公告)日：2020-01-02

申请号：US16454063

申请日：2019-06-27

Applicant: ASM IP Holding B.V.

Inventor： ManSu Lee ,  SungKyu Kang ,  EunSook Lee ,  MinSoo Kim ,  SeungWoo Choi

IPC: C23C16/455 ,  H01L21/033

Abstract: A method of depositing a thin film having a desired etching characteristic while improving a loss amount and loss uniformity of a lower film includes, on the semiconductor substrate and the pattern structure: a first operation of depositing a portion of the thin film by repeating a first cycle comprising (a1) a source gas supply operation, (b1) a reactant gas supply operation, and (c1) a plasma supply operation for a certain number of times; a second operation of depositing a remaining portion of the thin film by repeating a second cycle comprising (a2) a source gas supply operation, (b2) a reactant gas supply operation, and (c2) a plasma supply operation for a certain number of times after the first operation, wherein a supply time of the source gas supply operation (a1) is longer than a supply time of the source gas supply operation (a2).

公开(公告)号：US10914004B2

公开(公告)日：2021-02-09

申请号：US16454063

申请日：2019-06-27

Applicant: ASM IP Holding B.V.

Inventor： ManSu Lee ,  SungKyu Kang ,  EunSook Lee ,  MinSoo Kim ,  SeungWoo Choi

IPC: C23C16/455 ,  H01L21/033 ,  H01L21/02 ,  H01L21/311

Abstract: A method of depositing a thin film having a desired etching characteristic while improving a loss amount and loss uniformity of a lower film includes, on the semiconductor substrate and the pattern structure: a first operation of depositing a portion of the thin film by repeating a first cycle comprising (a1) a source gas supply operation, (b1) a reactant gas supply operation, and (c1) a plasma supply operation for a certain number of times; a second operation of depositing a remaining portion of the thin film by repeating a second cycle comprising (a2) a source gas supply operation, (b2) a reactant gas supply operation, and (c2) a plasma supply operation for a certain number of times after the first operation, wherein a supply time of the source gas supply operation (a1) is longer than a supply time of the source gas supply operation (a2).