公开(公告)号：US20230238243A1

公开(公告)日：2023-07-27

申请号：US18100298

申请日：2023-01-23

Applicant: ASM IP Holding B.V.

Inventor： Mojtaba Samiee ,  Petri Raisanen ,  Dong Li ,  Yasiel Cabrera

IPC: H01L21/28 ,  H01L29/49

CPC classification number: H01L21/28247 ,  H01L29/4966 ,  H01L21/28088

Abstract: Methods of forming structures including a layer of metal carbon nitride (MCN) and of mitigating metal loss from and/or tuning the layer of metal carbon nitride are disclosed. Systems for forming the layers and mitigating metal loss and structures formed using the methods are also disclosed.

公开(公告)号：US20240420958A1

公开(公告)日：2024-12-19

申请号：US18740699

申请日：2024-06-12

Applicant: ASM IP Holding B.V.

Inventor： Venkata Surya Naga Raju Chava ,  Estiaque Haidar Shourov ,  Robert Brennan Milligan ,  Mojtaba Samiee ,  Balaji Kannan ,  Dong Li ,  Rajkumar Jakkaraju

IPC: H01L21/28 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02

Abstract: Methods, system and apparatus for semiconductor processing including supporting a substrate comprising one or more oxide layers disposed on the substrate on a substrate support in a first reaction chamber, contacting a top surface of the one or more oxide layers of the substrate with an excited species, supporting the substrate in a second reaction chamber and depositing a transition metal layer over the top surface subsequent to contacting the top surface with the excited species.