公开(公告)号：US20240371662A1

公开(公告)日：2024-11-07

申请号：US18651935

申请日：2024-05-01

Applicant: ASM IP Holding B.V.

Inventor： Rajkumar Jakkaraju ,  Paul Ma ,  Yi Zhang ,  Dong Li

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Described herein are example, method, system and apparatus for supporting a substrate in a chamber wherein the substrate comprises a surface, contacting the surface of the substrate with an excited species within the chamber, contacting the surface of the substrate with an etchant species within the chamber and removing organic residue or non-organic residue, or a combination thereof, from the surface of the substrate responsive to executing the above steps.

公开(公告)号：US20240420958A1

公开(公告)日：2024-12-19

申请号：US18740699

申请日：2024-06-12

Applicant: ASM IP Holding B.V.

Inventor： Venkata Surya Naga Raju Chava ,  Estiaque Haidar Shourov ,  Robert Brennan Milligan ,  Mojtaba Samiee ,  Balaji Kannan ,  Dong Li ,  Rajkumar Jakkaraju

IPC: H01L21/28 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02

Abstract: Methods, system and apparatus for semiconductor processing including supporting a substrate comprising one or more oxide layers disposed on the substrate on a substrate support in a first reaction chamber, contacting a top surface of the one or more oxide layers of the substrate with an excited species, supporting the substrate in a second reaction chamber and depositing a transition metal layer over the top surface subsequent to contacting the top surface with the excited species.