公开(公告)号：US20240145236A1

公开(公告)日：2024-05-02

申请号：US18383109

申请日：2023-10-24

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  Ryu Nakano ,  KiHun Kim ,  Rin Ha

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02274

Abstract: Provided is a method for improving the inhibiting characteristics in the upper portion of the gap. In one embodiment of the disclosure, a first inhibitor and a second inhibitor are supplied, therefore more inhibiting radicals may be generated and remove more reaction activation sites from the upper portion of the gap and improve the inhibiting characteristics in the upper portion compared to in the lower portion. The substrate processing method of the disclosure may facilitate further filling the gap with negative slope and complex structure.