公开(公告)号：US20200343134A1

公开(公告)日：2020-10-29

申请号：US16926192

申请日：2020-07-10

Applicant: ASM IP Holding B.V.

Inventor： Alexey Y. Kovalgin ,  Mengdi Yang ,  Antonius A. I. Aarnink ,  Rob A.M. Wolters

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/14 ,  C23C16/56 ,  C23C16/455 ,  C23C16/06 ,  H01L21/285 ,  H01L23/532

Abstract: A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.

公开(公告)号：US20180025939A1

公开(公告)日：2018-01-25

申请号：US15615489

申请日：2017-06-06

Applicant: ASM IP Holding B.V.

Inventor： Alexey Y. Kovalgin ,  Mengdi Yang ,  Antonius A.I. Aarnink ,  Rob A.M. Wolters

IPC: H01L21/768 ,  C23C16/06 ,  C23C16/455 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L21/76843 ,  C23C16/04 ,  C23C16/045 ,  C23C16/06 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76849 ,  H01L23/53238

Abstract: A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.