公开(公告)号：US20200343134A1

公开(公告)日：2020-10-29

申请号：US16926192

申请日：2020-07-10

Applicant: ASM IP Holding B.V.

Inventor： Alexey Y. Kovalgin ,  Mengdi Yang ,  Antonius A. I. Aarnink ,  Rob A.M. Wolters

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/14 ,  C23C16/56 ,  C23C16/455 ,  C23C16/06 ,  H01L21/285 ,  H01L23/532

Abstract: A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.

公开(公告)号：US10714385B2

公开(公告)日：2020-07-14

申请号：US15615489

申请日：2017-06-06

Applicant: ASM IP Holding B.V.

Inventor： Alexey Y. Kovalgin ,  Mengdi Yang ,  Antonius A. I. Aarnink ,  Rob A. M. Wolters

IPC: H01L21/31 ,  H01L21/768 ,  C23C16/04 ,  C23C16/14 ,  C23C16/56 ,  C23C16/455 ,  C23C16/06 ,  H01L21/285 ,  H01L23/532

Abstract: A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.

公开(公告)号：US20130337653A1

公开(公告)日：2013-12-19

申请号：US13918094

申请日：2013-06-14

Applicant: ASM IP Holding B.V.

Inventor： Alexey Y. Kovalgin ,  Antonius A. I. Aarnink

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/31116 ,  C23C16/452 ,  H01L21/02104 ,  H01L21/306 ,  H01L21/3065

Abstract: A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an electric resistance heating filament (244); a sleeve (220) with a central sleeve axis (L), wherein said sleeve defines a reaction space (222) that accommodates the heating filament (244), and wherein said sleeve includes an inlet opening (224) via which the reaction space is fluidly connected to the precursor gas source (250), and an outlet opening (228) via which the reaction space is fluidly connected to the substrate processing chamber (158), said inlet and outlet openings (224, 228) being spaced apart along the central sleeve axis (L).

Abstract translation: 一种半导体处理设备（1），包括：衬底处理室（158），其限定基板支撑位置（156），大致平面的半导体衬底（300）可支撑所述衬底支撑位置; 和至少一个自由基源（200），包括：前体气体源（250）; 电阻加热丝（244）; 具有中心套筒轴线（L）的套筒（220），其中所述套筒限定容纳加热丝（244）的反应空间（222），并且其中所述套筒包括入口开口（224），反应空间 流体连接到前体气体源（250）的出口开口（228），反应空间通过该出口开口流体连接到基底处理室（158），所述入口和出口开口（224,228）沿着 中心套筒轴（L）。