公开(公告)号：US20150114295A1

公开(公告)日：2015-04-30

申请号：US14521588

申请日：2014-10-23

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon KIM ,  Dae Youn KIM ,  Dong Rak JUNG ,  Young Seok CHOI ,  Sang Wook LEE

IPC: C23C16/50 ,  C23C16/455 ,  C23C16/44 ,  C23C16/46

CPC classification number: C23C16/4412 ,  C23C16/452 ,  C23C16/45508

Abstract: An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support for supporting a substrate; a reaction chamber wall defining a reaction chamber and contacting the substrate support; a plurality of gas inlets connected to the reaction chamber wall; a remote plasma unit connected to at least one of the plurality of gas inlets; and a gas-supplying path connected to the plurality of gas inlets and defining a reaction region along with the substrate support. A plurality of gases passing through the plurality of gas inlets move along the gas-supplying path to be directly supplied onto the substrate without contacting other parts of the reactor.

Abstract translation: 本发明的示例性实施例提供了一种沉积设备，包括：用于支撑衬底的衬底支撑件; 反应室壁，其限定反应室并接触所述基板支撑件; 连接到反应室壁的多个气体入口; 连接到所述多个气体入口中的至少一个的远程等离子体单元; 以及连接到所述多个气体入口并且与所述衬底支撑件一起限定反应区域的气体供应路径。 通过多个气体入口的多个气体沿气体供应路径移动，以直接供应到基板上，而不与反应器的其它部分接触。