公开(公告)号：US20170148630A1

公开(公告)日：2017-05-25

申请号：US15396697

申请日：2017-01-02

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon KIM ,  Dae Youn Kim ,  Sang Wook Lee

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0228

Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

公开(公告)号：US20150114295A1

公开(公告)日：2015-04-30

申请号：US14521588

申请日：2014-10-23

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon KIM ,  Dae Youn KIM ,  Dong Rak JUNG ,  Young Seok CHOI ,  Sang Wook LEE

IPC: C23C16/50 ,  C23C16/455 ,  C23C16/44 ,  C23C16/46

CPC classification number: C23C16/4412 ,  C23C16/452 ,  C23C16/45508

Abstract: An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support for supporting a substrate; a reaction chamber wall defining a reaction chamber and contacting the substrate support; a plurality of gas inlets connected to the reaction chamber wall; a remote plasma unit connected to at least one of the plurality of gas inlets; and a gas-supplying path connected to the plurality of gas inlets and defining a reaction region along with the substrate support. A plurality of gases passing through the plurality of gas inlets move along the gas-supplying path to be directly supplied onto the substrate without contacting other parts of the reactor.

Abstract translation: 本发明的示例性实施例提供了一种沉积设备，包括：用于支撑衬底的衬底支撑件; 反应室壁，其限定反应室并接触所述基板支撑件; 连接到反应室壁的多个气体入口; 连接到所述多个气体入口中的至少一个的远程等离子体单元; 以及连接到所述多个气体入口并且与所述衬底支撑件一起限定反应区域的气体供应路径。 通过多个气体入口的多个气体沿气体供应路径移动，以直接供应到基板上，而不与反应器的其它部分接触。

公开(公告)号：US20180066359A1

公开(公告)日：2018-03-08

申请号：US15807896

申请日：2017-11-09

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

公开(公告)号：US20150125629A1

公开(公告)日：2015-05-07

申请号：US14526811

申请日：2014-10-29

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon KIM ,  Dae Youn Kim ,  Sang Wook Lee

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/513 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  C23C16/30

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0228

Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

Abstract translation: 沉积薄膜的方法包括：首先重复第一气体供应循环，第一气体供应循环包括将源气体供应到反应空间; 供应第一等离子体，同时向反应空间供应反应气体; 重复第二次气体供给循环第二次，第二气体供应循环包括将源气体供应到反应空间; 以及在将所述反应气体供应到所述反应空间的同时供给第二等离子体，其中所述第一等离子体的供给包括供给远程等离子体，所述第二等离子体的供给包括供给直接等离子体

公开(公告)号：US20200224308A1

公开(公告)日：2020-07-16

申请号：US16834283

申请日：2020-03-30

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo JANG ,  Dae Youn KIM ,  Jeong Ho LEE ,  Young Hoon KIM ,  Seung Seob LEE ,  Woo Chan KIM

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US20150125628A1

公开(公告)日：2015-05-07

申请号：US14285831

申请日：2014-05-23

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

Abstract translation: 公开了一种沉积薄膜的方法，该方法包括将净化气体和源气体在第一时段内供应到多个反应器中，停止源气体的供应，以及将净化气体和反应气体供应到多个 反应器第二期，并将反应气体和等离子体供应到多个反应器中第三期。