HIGH-THROUGHPUT SEMICONDUCTOR-PROCESSING APPARATUS EQUIPPED WITH MULTIPLE DUAL-CHAMBER MODULES
    1.
    发明申请
    HIGH-THROUGHPUT SEMICONDUCTOR-PROCESSING APPARATUS EQUIPPED WITH MULTIPLE DUAL-CHAMBER MODULES 审中-公开
    配有多个双模块的高通量半导体加工设备

    公开(公告)号:US20160181128A1

    公开(公告)日:2016-06-23

    申请号:US15060412

    申请日:2016-03-03

    Abstract: A wafer-processing apparatus includes: multiple discrete units of reactors disposed on the same plane; a wafer-handling chamber having a polygonal shape having multiple sides corresponding to and being attached to the multiple discrete units, respectively, and one additional side for a load lock chamber; a load lock chamber attached to the one additional side of the wafer-handling chamber; multiple discrete gas boxes for controlling gases corresponding to and being connected to the multiple discrete units, respectively; and multiple discrete electric boxes for controlling electric systems corresponding to and being detachably connected to the multiple discrete units, respectively, wherein the gas boxes and the electric boxes are arranged alternately as viewed from above under the multiple discrete units, and the electric boxes can be pulled out outwardly without being disconnected from the corresponding units so that sides of the gas boxes are accessible.

    Abstract translation: 晶片处理装置包括:设置在同一平面上的反应堆的多个分立单元; 晶片处理室具有分别对应于多个分立单元并且分别连接到多个分立单元的多边形的多边形形状,以及用于负载锁定室的一个附加侧; 附接到晶片处理室的另一侧的负载锁定室; 多个分立的气体箱,分别用于控制对应于多个离散单元并连接到多个分立单元的气体; 以及分别用于控制与多个分立单元相对应并且可拆卸地连接到多个分立单元的电气系统的多个分立电箱,其中气盒和电箱在多个分立单元下方从上方观察交替排列,电箱可以 向外拉出而不与相应的单元断开连接,使得气箱的侧面可以接近。

    Film forming apparatus
    7.
    发明授权

    公开(公告)号:US09885112B2

    公开(公告)日:2018-02-06

    申请号:US14557774

    申请日:2014-12-02

    Abstract: A film forming apparatus includes a susceptor, and a shower head provided above the susceptor and having a first passage and a second passage independent of the first passage formed therein, wherein the first passage is formed through the shower head by being provided with a first cavity surrounded by a first upper wall and a first lower wall, a first thin hole formed in the first upper wall, and a plurality of second thin holes formed in the first lower wall, the height of the first upper wall in the vertical direction is reduced with increase in distance from the first thin hole, and the second passage is formed in the same manner as the first passage.

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