公开(公告)号：US20190181002A1

公开(公告)日：2019-06-13

申请号：US15838428

申请日：2017-12-12

Applicant: ASM IP Holding B.V.

Inventor： Toshiaki Iijima ,  Masaki Tokunaga ,  Jun Kawahara

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/34 ,  C23C16/455

Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

公开(公告)号：US11037780B2

公开(公告)日：2021-06-15

申请号：US15838428

申请日：2017-12-12

Applicant: ASM IP Holding B.V.

Inventor： Toshiaki Iijima ,  Masaki Tokunaga ,  Jun Kawahara

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50

Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

公开(公告)号：US20220319832A1

公开(公告)日：2022-10-06

申请号：US17705206

申请日：2022-03-25

Applicant: ASM IP Holding B.V.

Inventor： Toshiaki Iijima

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  H01L21/311

Abstract: Methods of depositing silicon nitride on a surface of a substrate are disclosed. The methods include using an intermediate treatment process to increase a quality of the silicon nitride layer and a second treatment process.