公开(公告)号：US20190237327A1

公开(公告)日：2019-08-01

申请号：US15886225

申请日：2018-02-01

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Nupur Bhargava ,  John Tolle ,  Vijay D'Costa

IPC: H01L21/02 ,  H01L29/165

Abstract: A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.

公开(公告)号：US10535516B2

公开(公告)日：2020-01-14

申请号：US15886225

申请日：2018-02-01

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Nupur Bhargava ,  John Tolle ,  Vijay D'Costa

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/165

Abstract: A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.