公开(公告)号：US20190013199A1

公开(公告)日：2019-01-10

申请号：US15985261

申请日：2018-05-21

Applicant: ASM IP Holding B.V.

Inventor： Nupur Bhargava ,  Joe Margetis ,  John Tolle

IPC: H01L21/02 ,  C23C16/40

Abstract: A method for forming a forming a silicon germanium tin (SiGeSn) layer is disclosed. The method may include, providing a substrate within a reaction chamber, exposing the substrate to a pre-deposition precursor pulse, which comprises tin tetrachloride (SnCl4), exposing the substrate to a deposition precursor gas mixture comprising a hydrogenated silicon source, germane (GeH4), and tin tetrachloride (SnCl4), and depositing the silicon germanium tin (SiGeSn) layer over a surface of the substrate. Semiconductor device structures including a silicon germanium tin (SiGeSn) layer formed by the methods of the disclosure are also provided.

公开(公告)号：US20190237327A1

公开(公告)日：2019-08-01

申请号：US15886225

申请日：2018-02-01

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Nupur Bhargava ,  John Tolle ,  Vijay D'Costa

IPC: H01L21/02 ,  H01L29/165

Abstract: A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.

公开(公告)号：US20180323059A1

公开(公告)日：2018-11-08

申请号：US15957565

申请日：2018-04-19

Applicant: ASM IP Holding B.V.

Inventor： Nupur Bhargava ,  John Tolle ,  Joe Margetis ,  Matthew Goodman ,  Robert Vyne

IPC: H01L21/02 ,  H01L29/66 ,  C30B25/10 ,  C30B29/10

CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B25/10 ,  C30B29/06 ,  C30B29/10 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L29/66795

Abstract: A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×1021 atoms per cubic centimeter.

公开(公告)号：US20170278707A1

公开(公告)日：2017-09-28

申请号：US15450199

申请日：2017-03-06

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle ,  Gregory Bartlett ,  Nupur Bhargava

IPC: H01L21/02 ,  C23C16/455

CPC classification number: H01L21/02636 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45514 ,  C23C16/45574 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

公开(公告)号：US10685834B2

公开(公告)日：2020-06-16

申请号：US15985261

申请日：2018-05-21

Applicant: ASM IP Holding B.V.

Inventor： Nupur Bhargava ,  Joe Margetis ,  John Tolle

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/02 ,  C23C16/14 ,  C23C16/28 ,  C23C16/455 ,  C23C16/24

Abstract: A method for forming a forming a silicon germanium tin (SiGeSn) layer is disclosed. The method may include, providing a substrate within a reaction chamber, exposing the substrate to a pre-deposition precursor pulse, which comprises tin tetrachloride (SnCl4), exposing the substrate to a deposition precursor gas mixture comprising a hydrogenated silicon source, germane (GeH4), and tin tetrachloride (SnCl4), and depositing the silicon germanium tin (SiGeSn) layer over a surface of the substrate. Semiconductor device structures including a silicon germanium tin (SiGeSn) layer formed by the methods of the disclosure are also provided.

公开(公告)号：US20180151358A1

公开(公告)日：2018-05-31

申请号：US15863340

申请日：2018-01-05

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle ,  Gregory Bartlett ,  Nupur Bhargava

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/24

CPC classification number: H01L21/02636 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45514 ,  C23C16/45574 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

公开(公告)号：US09892913B2

公开(公告)日：2018-02-13

申请号：US15450199

申请日：2017-03-06

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle ,  Gregory Bartlett ,  Nupur Bhargava

IPC: H01L21/20 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/02636 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45514 ,  C23C16/45574 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

公开(公告)号：US10535516B2

公开(公告)日：2020-01-14

申请号：US15886225

申请日：2018-02-01

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Nupur Bhargava ,  John Tolle ,  Vijay D'Costa

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/165

Abstract: A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.

公开(公告)号：US10262859B2

公开(公告)日：2019-04-16

申请号：US15863340

申请日：2018-01-05

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle ,  Gregory Bartlett ,  Nupur Bhargava

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/24

Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

公开(公告)号：US10446393B2

公开(公告)日：2019-10-15

申请号：US15957565

申请日：2018-04-19

Applicant: ASM IP Holding B.V.

Inventor： Nupur Bhargava ,  John Tolle ,  Joe Margetis ,  Matthew Goodman ,  Robert Vyne

IPC: H01L21/02 ,  H01L29/66 ,  C30B29/10 ,  C30B25/10 ,  C30B25/02 ,  C30B29/06 ,  C30B29/52

Abstract: A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×1021 atoms per cubic centimeter.