公开(公告)号：US20230116427A1

公开(公告)日：2023-04-13

申请号：US17962009

申请日：2022-10-07

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Jiwen Xiang ,  Shujin Huang ,  Loc Vinh Tran ,  Wentao Wang ,  Xing Lin

IPC: C23C16/44 ,  H01L21/687 ,  H01L21/02 ,  C23C16/52 ,  C23C16/02 ,  C23C16/24

Abstract: A semiconductor processing system includes a gas delivery module, and a chamber body connected to the gas delivery module. The divider has an aperture, is fixed within an interior of the chamber body, and separates an interior of the chamber body into upper and lower chambers, the aperture fluidly coupling the lower chamber to the upper chamber. A susceptor is arranged within the aperture. A controller is operably connected to the gas delivery module to purge the lower chamber with a first purge flow including an etchant while etching the upper chamber, purge the lower chamber with a second purge flow including the etchant while depositing a precoat in the upper chamber, and purge the lower chamber with a third purge flow including the etchant while depositing a film onto a substrate in the upper chamber. Film deposition methods and lower chamber etchant purge kits are also described.

公开(公告)号：US20240425986A1

公开(公告)日：2024-12-26

申请号：US18746189

申请日：2024-06-18

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Jiwen Xiang ,  Zhizhong Chen ,  Yang Wang ,  Xing Lin

IPC: C23C16/455 ,  C23C16/52

Abstract: Methods and apparatuses for decoupling the tuning of cross-substrate thickness variation and cross-substrate resistance variation in a gas injection system are described. A controller in a gas injection system may deposit, via control of the plurality of first mass flow controllers (MFCs) and the plurality of second MFCs, a material layer deposited on a substrate. The controller may adjust, via control of the plurality of first MFCs, a cross-substrate thickness variation of the material layer. The controller may adjust, via control of the plurality of second MFCs and independent of the cross-substrate thickness variation, cross-substrate resistivity variation of the material layer.

公开(公告)号：US20230128390A1

公开(公告)日：2023-04-27

申请号：US18048099

申请日：2022-10-20

Applicant: ASM IP Holding, B.V.

Inventor： Shujin Huang ,  Junweli Su ,  Wentao Wang ,  Zhizhong Chen ,  Xing Lin ,  Jiwen Xiang

IPC: H01L21/687

Abstract: A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.