公开(公告)号：US11791153B2

公开(公告)日：2023-10-17

申请号：US17170742

申请日：2021-02-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Sol Kim ,  Ying-Shen Kuo ,  Michael Schmotzer ,  Eric James Shero ,  Paul Ma

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02181 ,  H01L21/0228 ,  H01L21/02244 ,  H01L21/76837

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

公开(公告)号：US20210249263A1

公开(公告)日：2021-08-12

申请号：US17170742

申请日：2021-02-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Sol Kim ,  Ying-Shen Kuo ,  Michael Schmotzer ,  Eric James Shero ,  Paul Ma

IPC: H01L21/02 ,  H01L21/768

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

公开(公告)号：US20220349051A1

公开(公告)日：2022-11-03

申请号：US17729645

申请日：2022-04-26

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Jereld Lee Winkler ,  Moataz Bellah Mousa ,  Mustafa Muhammad ,  Paul Ma ,  Hichem M'Saad ,  Ying-Shen Kuo ,  Chad Lunceford ,  Shuaidi Zhang

IPC: C23C16/44 ,  B08B7/00 ,  B08B9/08 ,  B08B5/00 ,  H01J37/32

Abstract: A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.