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    SYSTEMS AND METHODS FOR DEPOSITION OF MOLYBDENUM FOR SOURCE/DRAIN CONTACTS
    2.
    发明公开
    SYSTEMS AND METHODS FOR DEPOSITION OF MOLYBDENUM FOR SOURCE/DRAIN CONTACTS 审中-公开

    公开(公告)号：US20230298902A1

    公开(公告)日：2023-09-21

    申请号：US18121064

    申请日：2023-03-14

    Applicant: ASM IP HOLDING B.V.

    Inventor： Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero

    IPC: H01L21/3205 ,  H01L29/40 ,  H01L21/02 ,  H01L21/285

    CPC classification number: H01L21/32051 ,  H01L29/401 ,  H01L21/02046 ,  H01L21/28556

    Abstract: Disclosed herein are systems and methods method for thin film deposition of molybdenum for source/drain formation. A deposition process may be performed in which the surface is contacted in the reaction chamber with a first oxygen-free molybdenum halide reactant at a first temperature, wherein said contacting with the first oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the temperature of the reaction chamber may be raised from the first temperature to a second temperature. In some embodiments, the substrate in the reaction chamber may be contacted with a second oxygen-free molybdenum halide reactant at the second temperature, wherein said contacting with the second oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the deposition at the second temperature may be repeated until a molybdenum-containing film of desired thickness is formed.

    DEPOSITION OF OXIDES AND NITRIDES
    5.
    发明申请
    DEPOSITION OF OXIDES AND NITRIDES 审中-公开

    公开(公告)号：US20200263297A1

    公开(公告)日：2020-08-20

    申请号：US16748299

    申请日：2020-01-21

    Applicant: ASM IP Holding B.V.

    Inventor： Henri Jussila ,  Chiyu Zhu ,  Qi Xie ,  Jiyeon Kim ,  Tom E. Blomberg

    IPC: C23C16/455 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40

    Abstract: Vapor deposition processes such as atomic layer deposition (ALD) processes employing a deposition enhancing precursor can be used to form a variety of oxide and nitride films, including metal oxide, metal nitride, metal oxynitride, silicon oxide and silicon nitride films. For example, the methods can be used to deposit transition metal nitrides, transition metal oxides, and silicon oxides and nitrides. In some embodiments the deposition enhancing precursor comprises a Group II metal such as Mg, Sr, Ba or Ca. Atomic layer deposition processes may comprise a deposition cycle comprising a first sub-cycle in which a substrate is contacted with a deposition enhancing precursor and an oxygen or nitrogen reactant and a second sub-cycle in which the substrate is contacted with a metal or silicon precursor and an oxygen or nitrogen reactant. In some embodiments the methods advantageously enable improved thin film formation, for example increased deposition rates.

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