公开(公告)号：US20250029829A1

公开(公告)日：2025-01-23

申请号：US18770973

申请日：2024-07-12

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  Sungdae Woo ,  JuSeok Jeon ,  SeungRyul Lee ,  Hyunchul Kim ,  Yujin Kim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32 ,  H01L21/033

Abstract: Provided is a substrate processing method using a PEALD method in which an amorphous TiN film is formed on the substrate. The substrate processing method comprises providing the substrate to a reaction chamber, supplying a first gas to the reaction chamber, supplying a second gas to the reaction chamber, and applying a power to the reaction chamber, wherein a frequency of the power is a variable frequency, wherein the second gas is activated by the power.