公开(公告)号：US20230395372A1

公开(公告)日：2023-12-07

申请号：US18236654

申请日：2023-08-22

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yamada ,  Kai Matsuhisa ,  YouJin Choi ,  Hyunchul Kim ,  Eunji Bae ,  SeungRyul Lee ,  Naoki Inoue ,  Ryu Nakano ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/50

CPC classification number: H01L21/0234 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32165 ,  H01J37/3244 ,  C23C16/04 ,  C23C16/50 ,  H01J2237/332

Abstract: Methods of forming patterned structures suitable for a multiple patterning process and manipulating film properties are disclosed. Exemplary methods include forming a layer overlying the substrate, followed by treating the layer, wherein the layer is formed by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency. Exemplary methods can further include a step of treating the deposited material.

公开(公告)号：US20250029829A1

公开(公告)日：2025-01-23

申请号：US18770973

申请日：2024-07-12

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  Sungdae Woo ,  JuSeok Jeon ,  SeungRyul Lee ,  Hyunchul Kim ,  Yujin Kim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32 ,  H01L21/033

Abstract: Provided is a substrate processing method using a PEALD method in which an amorphous TiN film is formed on the substrate. The substrate processing method comprises providing the substrate to a reaction chamber, supplying a first gas to the reaction chamber, supplying a second gas to the reaction chamber, and applying a power to the reaction chamber, wherein a frequency of the power is a variable frequency, wherein the second gas is activated by the power.