公开(公告)号：US20040216665A1

公开(公告)日：2004-11-04

申请号：US10428207

申请日：2003-04-29

Applicant: ASM International N.V.

Inventor： Pekka J. Soininen ,  Sven Lindfors

IPC: C23C016/00

CPC classification number: C23C16/4412 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45574

Abstract: A method and apparatus for depositing thin films onto a substrate is provided. The apparatus includes a gas injection structure that is positioned within a reaction chamber that has a platform. The gas injection structure may be positioned above or below the platform and comprises a first gas injector and a second gas injector. The first gas injector is in fluid communication with a first reactant source and a purge gas source. Similarly, the second gas injector is in fluid communication with a second reactant source and a purge gas source. The first and second injectors include hollow tubes with apertures opening to the reaction chamber. In one configuration, the tubes are in the form of interleaved branching tubes forming showerhead rakes. Methods are provided for deposition, in which multiple pulses of purge and reactant gases are provided for each purge and reactant step.

Abstract translation: 提供了一种用于在衬底上沉积薄膜的方法和装置。 该装置包括位于具有平台的反应室内的气体注入结构。 气体注入结构可以位于平台的上方或下方，并且包括第一气体喷射器和第二气体喷射器。 第一气体注射器与第一反应物源和净化气体源流体连通。 类似地，第二气体喷射器与第二反应物源和净化气体源流体连通。 第一和第二注射器包括具有通向反应室的孔的中空管。 在一种配置中，管是形成喷头耙的交错分支管的形式。 提供了用于沉积的方法，其中为每个吹扫和反应物步骤提供多个吹扫和反应气体脉冲。