Estimating Deformation of a Patterning Device and/or a Change in Its Position
    1.
    发明申请
    Estimating Deformation of a Patterning Device and/or a Change in Its Position 有权
    估计图案化装置的变形和/或其位置变化

    公开(公告)号:US20170068171A1

    公开(公告)日:2017-03-09

    申请号:US15122772

    申请日:2015-03-05

    Abstract: A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.

    Abstract translation: 提供了用于确定图案形成装置相对于图案形成装置的变形和/或移位位置的系统和方法。 该系统包括测量图案形成装置上的多个参考标记的相应位置的第一感测子系统和测量图案形成装置的边缘相对于支撑件的位置的第二感测子系统。 该系统还包括控制器,用于基于测量的图案形成装置上的标记的相应位置来确定图案化部分的绝对位置和绝对位置的变化,基于图案化装置的边缘确定相对位置的变化 测量边缘位置,并且估计图案形成装置相对于支撑件的位置的变化和图案形成装置的图案化部分的图案变形在一段时间内的变化。

    METHOD OF OPERATING A PATTERNING DEVICE AND LITHOGRAPHIC APPARATUS

    公开(公告)号:US20170123323A1

    公开(公告)日:2017-05-04

    申请号:US15405009

    申请日:2017-01-12

    Abstract: A lithographic reticle is illuminated to transfer a pattern to a substrate, inducing distortions due to heating. The distortions are calculated using reference marks in a peripheral portion of the reticle and measuring changes in their relative positions over time. A plurality of cells are defined for which a system of equations can be solved to calculate a dilation of each cell. In an embodiment, each equation relates positions of pairs of marks to dilations of the cells along a fine (s, s1, s2) connecting each pair. Local positional deviations can be calculated for a position by combining calculated dilations for cells between at least one measured peripheral mark and the position. Corrections can be applied in accordance with the result of the calculation. Energy may be applied to the patterning device (for example by thermal input or mechanical actuators) to modify a distribution of the local positional deviations.

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