Method and system for inspecting an EUV mask

    公开(公告)号:US10775325B2

    公开(公告)日:2020-09-15

    申请号:US16147277

    申请日:2018-09-28

    Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

    Charged particle beam inspection of ungrounded samples

    公开(公告)号:US11448607B2

    公开(公告)日:2022-09-20

    申请号:US16470928

    申请日:2017-12-04

    Inventor: Chiyan Kuan

    Abstract: Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.

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