公开(公告)号：US20230141799A1

公开(公告)日：2023-05-11

申请号：US18089848

申请日：2022-12-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Roshni BISWAS ,  Rafael C. HOWELL ,  Cuiping ZHANG ,  Ningning JIA ,  Jingjing LIU ,  Quan ZHANG

IPC: G06F30/398 ,  G06F30/392 ,  G03F7/20

CPC classification number: G06F30/398 ,  G06F30/392 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70625 ,  G06F2119/18

Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.