公开(公告)号：US20210271173A1

公开(公告)日：2021-09-02

申请号：US17326481

申请日：2021-05-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Yen-Wen LU ,  Peng LIU ,  Rafael C. HOWELL ,  Roshni BISWAS

IPC: G03F7/20

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US20230141799A1

公开(公告)日：2023-05-11

申请号：US18089848

申请日：2022-12-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Roshni BISWAS ,  Rafael C. HOWELL ,  Cuiping ZHANG ,  Ningning JIA ,  Jingjing LIU ,  Quan ZHANG

IPC: G06F30/398 ,  G06F30/392 ,  G03F7/20

CPC classification number: G06F30/398 ,  G06F30/392 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70625 ,  G06F2119/18

Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

公开(公告)号：US20220373892A1

公开(公告)日：2022-11-24

申请号：US17882389

申请日：2022-08-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Yen-Wen LU ,  : Peng LIU ,  Rafael C. HOWELL ,  Roshni BISWAS

IPC: G03F7/20

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.