公开(公告)号：US20240369940A1

公开(公告)日：2024-11-07

申请号：US18572764

申请日：2022-06-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen HSU ,  Ningning JIA ,  Xiaohui JIANG ,  Gengxin LIU

IPC: G03F7/00 ,  G03F1/36

Abstract: Apparatuses, systems, and methods for selecting a subset of critical patterns from a plurality of patterns of a design layout. In some embodiments, the method includes accessing diffraction order data based on the plurality of patterns that represent features to be formed on at least a portion of a substrate, the diffraction order data including a plurality of peaks corresponding to the plurality of patterns. The method also includes identifying a subset of representative peaks from the plurality of peaks according to one or more grouping criteria, the identifying including identifying a first representative peak that covers another peak colinear with the first representative peak, wherein the first representative peak is a discrete peak having a frequency that is an integer multiple of frequency of another discrete peak. The method further includes selecting the subset of critical patterns corresponding to the subset of representative peaks.

公开(公告)号：US20230141799A1

公开(公告)日：2023-05-11

申请号：US18089848

申请日：2022-12-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Roshni BISWAS ,  Rafael C. HOWELL ,  Cuiping ZHANG ,  Ningning JIA ,  Jingjing LIU ,  Quan ZHANG

IPC: G06F30/398 ,  G06F30/392 ,  G03F7/20

CPC classification number: G06F30/398 ,  G06F30/392 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70625 ,  G06F2119/18

Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

公开(公告)号：US20240353749A1

公开(公告)日：2024-10-24

申请号：US18713143

申请日：2022-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Ningning JIA ,  Zhan SHI ,  Rafael C. HOWELL

IPC: G03F1/36

CPC classification number: G03F1/36

Abstract: Methods, software, and systems are disclosed for determining mask patterns. The determination can include obtaining a mask pattern including sub-resolution assist features (SRAFs) each having constant widths. The widths are set as continuous variables and so can be optimized along with other variables during a mask optimization process of the mask pattern. Based on their population and/or statistics, the optimized continuous widths are then discretized to a limited number of global width levels. Further mask optimization be performed with the SRAFs having discretized optimized global width levels, where the width assigned to an individual SRAF may be adjusted to a different level of the global width levels.