公开(公告)号：US11846889B2

公开(公告)日：2023-12-19

申请号：US17436305

申请日：2020-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Dezheng Sun

IPC: G03F7/00

CPC classification number: G03F7/70641 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: A diffraction pattern guided source mask optimization (SMO) method that includes determining a source variable region from a diffraction pattern. The source variable region corresponds to one or more areas of a diffraction pattern in a pupil for which one or more pupil variables are to be adjusted. The source variable region in the diffraction pattern includes a plurality of pixels in an image of a selected region of interest in the diffraction pattern. Determining the source variable region can include binarization of the plurality of pixels in the image such that individual pixels are either included in the source variable region or excluded from the source variable region. The method can include adjusting the one or more pupil variables for the one or more areas of the pupil that correspond to the source variable region; and rendering a final pupil based on the adjusted one or more pupil variables.