公开(公告)号：US20230185183A1

公开(公告)日：2023-06-15

申请号：US17924626

申请日：2021-05-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Jiuning HU ,  Jun YE ,  Yen-Wen LU

IPC: G03F1/44 ,  G03F1/36 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F1/44 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70308 ,  G03F7/70375 ,  G03F7/70683

Abstract: A method for improving a design of a patterning device. The method includes (i) obtaining mask points of a design of a mask feature, wherein the mask feature corresponds to a target feature in a target pattern to be printed on a substrate; and (ii) adjusting locations of the mask points to generate a modified design of the mask feature based on the adjusted mask points.