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公开(公告)号：US20170160650A1
公开(公告)日：2017-06-08
申请号：US15419769
申请日：2017-01-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Erik Roelof LOOPSTRA , Johannes Jacobus Matheus BASELMANS , Marcel Mathijs Theodore Marie DIERICHS , Johannes Christiaan Maria JASPER , Matthew LIPSON , Hendricus Johannes Maria MEIJER , Uwe MICKAN , Johannes Catharinus Hubertus MULKENS , Tammo UITTERDIJK
IPC: G03F7/20
CPC classification number: G03F7/70866 , G03F7/7015 , G03F7/70341 , Y10S430/162
Abstract: A lithographic projection apparatus is disclosed for use with an immersion liquid positioned between the projection system and a substrate. Several methods and mechanism are disclosed to protect components of the projection system, substrate table and a liquid confinement system. These include providing a protective coating on a final element of the projection system as well as providing one or more sacrificial bodies upstream of the components. A two component final optical element of CaF2 is also disclosed.
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公开(公告)号：US20210165332A1
公开(公告)日：2021-06-03
申请号：US16769534
申请日：2018-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Paulus Jacobus Maria VAN ADRICHEM , Ahmad Wasiem Ibrahim EL-SAID , Christoph Rene Konrad Cebulla HENNERKES , Johannes Christiaan Maria JASPER
IPC: G03F7/20
Abstract: A method involving: obtaining a process model of a patterning process that includes or accounts for an average optical aberration of optical systems of a plurality of apparatuses for use with a patterning process; and applying the process model to determine an adjustment to a parameter of the patterning process to account for the average optical aberration.
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公开(公告)号：US20150346606A1
公开(公告)日：2015-12-03
申请号：US14825771
申请日：2015-08-13
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
CPC classification number: G03F7/705 , G03F7/70058 , G03F7/70141 , G03F7/706 , G03F7/70891
Abstract: A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.
Abstract translation: 使用光刻设备对衬底进行图案化的方法。 该方法包括使用照明系统提供辐射束，使用图案形成装置将辐射束赋予其横截面中的图案，以及使用投影系统将图案化的辐射束投影到许多基底的目标部分上 其中所述方法还包括在将所述图案化的辐射束投影到所述许多衬底的子集之后执行辐射束像差测量，使用所述辐射束像差测量的结果执行所述投影系统的调整，然后将所述图案化的辐射束 进入许多底物的另一个子集。
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公开(公告)号：US20130235361A1
公开(公告)日：2013-09-12
申请号：US13767774
申请日：2013-02-14
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
CPC classification number: G03F7/705 , G03F7/70058 , G03F7/70141 , G03F7/706 , G03F7/70891
Abstract: A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.
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