公开(公告)号：US20220121105A1

公开(公告)日：2022-04-21

申请号：US17426806

申请日：2020-01-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Marie-Claire VAN LARE ,  Frank Jan TIMMERMANS ,  Friso WITTEBROOD ,  John Martin MCNAMARA ,  Jozef Maria FINDERS

IPC: G03F1/32

Abstract: An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.