公开(公告)号：US20220121105A1

公开(公告)日：2022-04-21

申请号：US17426806

申请日：2020-01-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Marie-Claire VAN LARE ,  Frank Jan TIMMERMANS ,  Friso WITTEBROOD ,  John Martin MCNAMARA ,  Jozef Maria FINDERS

IPC: G03F1/32

Abstract: An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.

公开(公告)号：US20220066327A1

公开(公告)日：2022-03-03

申请号：US17415101

申请日：2019-12-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Johannes Jacobus Matheus BASELMANS ,  Duan-Fu Stephen HSU ,  Willem Jan BOUMAN ,  Frank Jan TIMMERMANS ,  Marie-Claire VAN LARE

IPC: G03F7/20

Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

公开(公告)号：US20240219843A1

公开(公告)日：2024-07-04

申请号：US18532977

申请日：2023-12-07

Applicant: ASML Netherlands B.V.

Inventor： Johannes Jacobus Matheus BASELMANS ,  Duan-Fu Stephen HSU ,  Willem Jan BOUMAN ,  Frank Jan TIMMERMANS ,  Marie-Claire VAN LARE

IPC: G03F7/00

CPC classification number: G03F7/70308

Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

公开(公告)号：US20220214610A1

公开(公告)日：2022-07-07

申请号：US17607701

申请日：2020-04-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Marie-Claire VAN LARE ,  Frank Jan TIMMERMANS

IPC: G03F1/54 ,  G03F1/32

Abstract: A patterning device configured for use in a lithographic apparatus, the lithographic apparatus being configured to use radiation for imaging a pattern at the patterning device via projection optics onto a substrate. The patterning device including a first component for reflecting and/or transmitting the radiation, and a second component covering at least a portion of a surface of the first component and configured to at least partially absorb the radiation incident on the second component. The second component has a sidewall, wherein at least one part of the sidewall extends away from the first component at an angle, the angle being with respect to a plane parallel to the surface of the first component, and wherein the angle is less than 85 degrees.