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公开(公告)号：US20230076218A1
公开(公告)日：2023-03-09
申请号：US17799019
申请日：2021-02-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Koenraad VAN INGEN SCHENAU , Abraham SLACHTER , Vadim Yourievich TIMOSHKOV , Marleen KOOIMAN , Marie-Claire VAN LARE , Hermanus Adrianus DILLEN , Stefan HUNSCHE , Luis Alberto Colina Sant COLINA , Aiqin JIANG , Fuming WANG , Sudharshanan RAGHUNATHAN
IPC: G03F7/20
Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.
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2.发明申请公开(公告)号：US20220375063A1
公开(公告)日：2022-11-24
申请号：US17761578
申请日：2020-09-14
Applicant: ASML Netherlands B.V.
Inventor： Maxim PISARENCO , Scott Anderson MIDDLEBROOKS , Mark John MASLOW , Marie-Claire VAN LARE , Chrysostomos BATISTAKIS
Abstract: A system and method for generating predictive images for wafer inspection using machine learning are provided. Some embodiments of the system and method include acquiring the wafer after a photoresist applied to the wafer has been developed; imaging a portion of a segment of the developed wafer; acquiring the wafer after the wafer has been etched; imaging the segment of the etched wafer; training a machine learning model using the imaged portion of the developed wafer and the imaged segment of the etched wafer; and applying the trained machine learning model using the imaged segment of the etched wafer to generate predictive images of a developed wafer. Some embodiments include imaging a segment of the developed wafer; imaging a portion of the segment of the etched wafer; training a machine learning model; and applying the trained machine learning model to generate predictive after-etch images of the developed wafer.
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公开(公告)号：US20220121105A1
公开(公告)日：2022-04-21
申请号：US17426806
申请日：2020-01-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Marie-Claire VAN LARE , Frank Jan TIMMERMANS , Friso WITTEBROOD , John Martin MCNAMARA , Jozef Maria FINDERS
IPC: G03F1/32
Abstract: An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.
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公开(公告)号：US20210079519A1
公开(公告)日：2021-03-18
申请号：US16971012
申请日：2019-02-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter Willem Herman DE JAGER , Sander Frederik WUISTER , Marie-Claire VAN LARE , Ruben Cornelis MAAS , Alexey Olegovich POLYAKOV , Tamara DRUZHININA , Victoria VORONINA , Evgenia KURGANOVA , Jim Vincent OVERKAMP , Bernardo KASTRUP , Maarten VAN KAMPEN , Alexandr DOLGOV
IPC: C23C16/04 , C23C16/455 , C23C16/48
Abstract: Methods and apparatuses for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated with electromagnetic radiation having a wavelength of less than 100 nm during a deposition process. Furthermore, an electric field controller is configured to apply an electric field that is oriented so as to force secondary electrons away from the substrate. The irradiation locally drives the deposition process in the selected portion and thereby causes the deposition process to, for example, form a layer of material in a pattern defined by the selected portion.
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公开(公告)号：US20220350254A1
公开(公告)日：2022-11-03
申请号：US17621494
申请日：2020-06-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim PISARENCO , Maurits VAN DER SCHAAR , Huaichen ZHANG , Marie-Claire VAN LARE
IPC: G03F7/20
Abstract: A method for applying a deposition model in a semiconductor manufacturing process. The method includes predicting a deposition profile of a substrate using the deposition model; and using the predicted deposition profile to enhance a metrology target design. The deposition model can be calibrated using experimental cross-section profile information from a layer of a physical substrate. In some embodiments, the deposition model is a machine-learning model, and calibrating the deposition model includes training the machine-learning model. The metrology target design may include an alignment metrology target design or an overlay metrology target design, for example.
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Patent Agency Ranking
公开(公告)号：US20220066327A1
公开(公告)日：2022-03-03
申请号：US17415101
申请日：2019-12-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Johannes Jacobus Matheus BASELMANS , Duan-Fu Stephen HSU , Willem Jan BOUMAN , Frank Jan TIMMERMANS , Marie-Claire VAN LARE
IPC: G03F7/20
Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.
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公开(公告)号：US20250021018A1
公开(公告)日：2025-01-16
申请号：US18712176
申请日：2022-11-09
Applicant: ASML NETHERLANDS B.V.
Abstract: A method for improving imaging of a feature on a mask to a substrate during scanning operation of a lithographic apparatus. The method includes obtaining a dynamic pupil representing evolution of an angular distribution of radiation exposing a mask during a scanning operation of a lithographic apparatus and determining a variation of shift of a feature at a substrate during the scanning operation due to interaction of the dynamic pupil with the mask. The method includes configuring a mask parameter and/or or a control parameter of the lithographic apparatus to reduce the variation of shift of the feature.
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公开(公告)号：US20240219843A1
公开(公告)日：2024-07-04
申请号：US18532977
申请日：2023-12-07
Applicant: ASML Netherlands B.V.
Inventor： Johannes Jacobus Matheus BASELMANS , Duan-Fu Stephen HSU , Willem Jan BOUMAN , Frank Jan TIMMERMANS , Marie-Claire VAN LARE
IPC: G03F7/00
CPC classification number: G03F7/70308
Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.
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公开(公告)号：US20240210336A1
公开(公告)日：2024-06-27
申请号：US18596467
申请日：2024-03-05
Applicant: ASML Netherlands B.V.
Inventor： Marie-Claire VAN LARE , Marco Jan-Jaco WIELAND
IPC: G01N23/2251 , G03F7/00
CPC classification number: G01N23/2251 , G03F7/70325 , G03F7/70558 , G03F7/7065 , G03F7/70655 , G01N2223/6116 , G01N2223/646
Abstract: Since a mask check wafer can utilize a different process than a production wafer, a high-contrast illumination setting with lower pupil fill ratio (PFR) that leads to a reduction of the productivity of the scanner can be utilized. By selecting a high-contrast illumination setting, which is different than that used on a production wafer, an improved ratio of particle printability to stochastic defects can be achieved. In combination, or instead higher dose resist can be utilized. This allows longer exposure of the wafer, such that the impact of photon shot noise is reduced, also resulting in an improved ratio of particle printability to stochastic defects. As a result, the particle printability can be enhanced further without leading to an excessive amount of stochastic defects. Because of this, the number of sites, and therefore the throughput, of a charged particle inspection and analysis can be significantly improved.
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公开(公告)号：US20220214610A1
公开(公告)日：2022-07-07
申请号：US17607701
申请日：2020-04-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Marie-Claire VAN LARE , Frank Jan TIMMERMANS
Abstract: A patterning device configured for use in a lithographic apparatus, the lithographic apparatus being configured to use radiation for imaging a pattern at the patterning device via projection optics onto a substrate. The patterning device including a first component for reflecting and/or transmitting the radiation, and a second component covering at least a portion of a surface of the first component and configured to at least partially absorb the radiation incident on the second component. The second component has a sidewall, wherein at least one part of the sidewall extends away from the first component at an angle, the angle being with respect to a plane parallel to the surface of the first component, and wherein the angle is less than 85 degrees.
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